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FDA15N65
650V N-Channel MOSFET
January 2007
UniFET
TM
Features
? 16A, 650V, R DS(on) = 0.44 Ω @V GS = 10 V
? Low gate charge ( typical 48.5 nC)
? Low C rss ( typical 23.6 pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
G D S
Absolute Maximum Ratings
TO-3PN
FDA Series
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FDA15N65
650
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
16
9.6
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
64
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
637
16
26
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate above 25 ° C
260
2.1
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ CS
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.48
--
40
Unit
° C/W
° C/W
° C/W
?200 7 Fairchild Semiconductor Corporation
FDA15N65 Rev. A
1
www.fairchildsemi.com
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